Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• electrode materials include CNTs, GR, and silicon/germanium nanowires. CNT-NEM switches CNTs are an ideal flexible material for NEM electrodes because of the high aspect ratio, current density, and excellent tensile strength. In 2000, Rueckes et al. [13] observed the electromechanical conversion in CNTs for

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• grow germanium nanowires on different substrates is described. Keywords: dewetting; germanium; interfacial energy; Laplace pressure; nanostructure; nanowire; Ostwald ripening; wetting layer; Introduction Wetting phenomena as well as the formation and movement of droplets are essential for numerous

• electron microscopy (TEM) images of gold particles formed on a silicon substrate at room temperature. Small gold clusters (<10 nm) are also seen between the droplets. Growth of germanium nanowires Figure 4 shows images of the resulting gold droplets on various substrates and the results after deposition of

• germanium was deposited onto Au/Si substrates, germanium nanowires were grown. The in-plane nanowires started to grow at places where the gold droplets had formed previously. The inset shows gold at the top of the germanium nanowire, where continuous homoepitaxial growth was catalysed. A sample with a

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

Fingerprints of a size-dependent crossover in the dimensionality of electronic conduction in Au-seeded Ge nanowires

• Maria Koleśnik-Gray,
• Gillian Collins,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1574–1578, doi:10.3762/bjnano.7.151

• Ireland 10.3762/bjnano.7.151 Abstract We studied the electrical transport properties of Au-seeded germanium nanowires with radii ranging from 11 to 80 nm at ambient conditions. We found a non-trivial dependence of the electrical conductivity, mobility and carrier density on the radius size. In particular

• have quasi one-dimensional character as reflected by the extracted screening lengths. Keywords: electrical transport; germanium nanowires; quasi-1D confinement; screening length; VLS growth; Results and Discussion Synthetic germanium nanowires (Ge NWs) have been proposed as potential next-generation

Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

• Stephen Connaughton,
• Maria Koleśnik-Gray,
• Richard Hobbs,
• Olan Lotty,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1284–1288, doi:10.3762/bjnano.7.119

• (FAU), Staudtstraße 7, 91058 Erlangen, Germany Materials Chemistry & Analysis Group, Department of Chemistry, University College Cork, Cork, Republic of Ireland 10.3762/bjnano.7.119 Abstract The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was

• ][5][6][7][8][9]. Germanium nanowires (Ge NWs) are of particular interest as they provide the prospect for quantum-related phenomena associated with one-dimensional (1D) confinement already at diameters of tens of nm [10], or determining their electronic properties by surface doping [11]. Among

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• occurring within the NWs. Keywords: bandgap; germanium; nanowires; near field; silicon; photoluminescence; Introduction Semiconductor nanowires (NWs) are thought of as promising building blocks for opto-electronic devices that exploit their novel electronic band structures generated by two-dimensional (2D